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irg4bc10sd-s IRG4BC10SD-L 06/12/01 www.irf.com 1 insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.10v @v ge = 15v, i c = 2.0a standard speed copack igbt ? extremely low voltage drop 1.1vtyp. @ 2a s-series: minimizes power dissipation at up to 3 khz pwm frequency in inverter drives, up to 4 khz in brushless dc drives. very tight vce(on) distribution igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations industry standard d 2 pak & to-262 packages benefits generation 4 igbt's offer highest efficiencies available igbt's optimized for specific application conditions hexfred diodes optimized for performance with igbt's . minimized recovery characteristics require less/no snubbing lower losses than mosfet's conduction and diode losses parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 14 i c @ t c = 100c continuous collector current 8.0 i cm pulsed collector current 18 a i lm clamped inductive load current 18 i f @ t c = 100 c diode continuous forward current 4.0 i fm diode maximum forward current 18 v ge gate-to-emitter voltage 20 v p d @ t c = 25 c maximum power dissipation 38 p d @ t c = 100 c maximum power dissipation 15 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 3.3 r jc junction-to-case - diode ??? ??? 7.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 80 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 2.0(0.07) ??? g (oz) thermal resistance absolute maximum ratings w d 2 pak irg4bc10sd-s to-262 IRG4BC10SD-L pd - 94255
irg4bc10sd-s/l 2 www.irf.com switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ?? vv ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.64 ? v/ cv ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 1.58 1.8 i c = 8.0a v ge = 15v ? 2.05 ? vi c = 14.0a see fig. 2, 5 ? 1.68 ? i c = 8.0a, t j = 150 c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -9.5 ? mv/ cv ce = v ge , i c = 250a g fe forward transconductance 3.65 5.48 ? sv ce = 100v, i c =8.0a i ces zero gate voltage collector current ?? 250 a v ge = 0v, v ce = 600v ?? 1000 v ge = 0v, v ce = 600v, t j = 150 c v fm diode forward voltage drop ? 1.5 1.8 v i c =4.0a see fig. 13 ? 1.4 1.7 i c =4.0a, t j = 150 c i ges gate-to-emitter leakage current ?? 100 na v ge = 20v electrical characteristics @ t j = 25 c (unless otherwise specified) details of note through are on the last page q g total gate charge (turn-on) ? 15 22 i c = 8.0a qge gate - emitter charge (turn-on) ? 2.42 3.6 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 6.53 9.8 v ge = 15v t d(on) turn-on delay time ? 76 ? t j = 25 c t r rise time ? 32 ? ns i c = 8.0a, v cc = 480v t d(off) turn-off delay time ? 815 1200 v ge = 15v, r g = 100 ? t f fall time ? 720 1080 energy losses include "tail" and e on turn-on switching loss ? 0.31 ? diode reverse recovery. e off turn-off switching loss ? 3.28 ? mj see fig. 9, 10, 18 e ts total switching loss ? 3.60 10.9 e ts total switching loss ? 1.46 2.6 mj i c = 5.0a t d(on) turn-on delay time ? 70 ? t j = 150 c, see fig. 10,11, 18 t r rise time ? 36 ? ns i c = 8.0a, v cc = 480v t d(off) turn-off delay time ? 890 ? v ge = 15v, r g = 100 ? t f fall time ? 890 ? energy losses include "tail" and e ts total switching loss ? 3.83 ? mj diode reverse recovery. l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 280 ? v ge = 0v c oes output capacitance ? 30 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 4.0 ?? = 1.0mhz t rr diode reverse recovery time ? 28 42 ns t j = 25 c see fig. ? 38 57 t j = 125 c 14 i f =4.0a i rr diode peak reverse recovery current ? 2.9 5.2 a t j = 25 c see fig. ? 3.7 6.7 t j = 125 c 15 v r = 200v q rr diode reverse recovery charge ? 40 60 nc t j = 25 c see fig. ? 70 105 t j = 125 c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 280 ? a/s t j = 25 c see fig. during t b ? 235 ? t j = 125 c 17 parameter min. typ. max. units conditions
irg4bc10sd-s/l www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 0.5 1.0 1.5 2.0 2.5 3.0 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 80 s pulse width ge t = 25 c j t = 150 c j 1 10 100 6 8 10 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j t = 150 c j 5s pulse width 0.1 1 10 100 f , frequency ( khz ) 0.0 2.0 4.0 6.0 8.0 10.0 load current ( a ) duty cycle : 50% tj = 125 c tsink = 90 c ta = 55 c gate drive as specified turn-on losses include effects of reverse recovery power dissipation = 9.2w for heatsink mount power dissipation = 1.8w for typical pcb socket mount 60% of rated voltage ideal diodes
irg4bc10sd-s/l 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.00 1.50 2.00 2.50 3.00 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 16 c i = a 8 c i = a 4 c 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) maximum dc collector current(a) c
irg4bc10sd-s/l www.irf.com 5 0 20 40 60 80 100 3.30 3.35 3.40 3.45 3.50 3.55 3.60 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 8a cc ge j c fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature r g , gate resistance ( ?) 0 5 10 15 20 0 5 10 15 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 8a cc c 1 10 100 0 100 200 300 400 500 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 16 c i = a 8 c i = a 4 c 100 ?
irg4bc10sd-s/l 6 www.irf.com 1 10 100 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c fig. 11 - typical switching losses vs. collector current fig. 12 - turn-off soa 0 4 8 12 16 20 0 3 6 9 12 15 i , collector current (a) total switching losses (mj) c r = 100 t = 150 c v = 480v v = 15v g j cc ge 100 ? 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm forward volta g e drop - v ( v ) t = 150 c t = 125 c t = 25 c j j j forward voltage drop - v fm ( v ) instantaneous forward current ( a ) fig. 13 - maximum forward voltage drop vs. instantaneous forward current
irg4bc10sd-s/l www.irf.com 7 fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt, fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt di (rec) m/dt- (a /s) qrr- (nc) irr- ( a) trr- (nc) 20 25 30 35 40 45 50 100 1000 f di /dt - ( a/ s ) i = 8.0a i = 4.0a f f v = 200v t = 125 c t = 25 c r j j 0 2 4 6 8 10 12 14 100 1000 f i = 8.0a i = 4.0a v = 200v t = 125 c t = 25 c r j j di /dt - ( a/ s ) f f 0 40 80 120 160 200 100 1000 f di /dt - ( a/ s ) i = 8.0a i = 4.0a v = 200v t = 125 c t = 25 c r j j f f 100 1000 100 1000 f di /dt - ( a/ s ) a i = 8.0a i = 4.0a v = 200v t = 125 c t = 25 c r j j f f
irg4bc10sd-s/l 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
irg4bc10sd-s/l www.irf.com 9 v g gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25 c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
irg4bc10sd-s/l 10 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) r e f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - gate 2 - d ra in 3 - source 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irg4bc10sd-s/l www.irf.com 11 to-262 part marking information to-262 package outline
irg4bc10sd-s/l 12 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 100w (figure 19) pulse width 80s; duty factor 0.1% . pulse width 5.0s, single shot. this only applies to to-262 package. this applies to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/01 d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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